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Radiated disturbance characteristics of SiC MOSFET module
Huazhen Huang Ningyan Wang Jialing Wu Tiebing Lu
Vol. 21, No. 2, pp. 494-504, Feb. 2021
10.1007/s43236-020-00187-4
Vol. 21, No. 2, pp. 494-504, Feb. 2021
10.1007/s43236-020-00187-4
Influence of Device Parameters Spread on Current Distribution of Paralleled Silicon Carbide MOSFETs
Junji Ke Zhibin Zhao Peng Sun Huazhen Huang James Abuogo
Xiang Cui
Vol. 19, No. 4, pp. 1054-1067, Jul. 2019
10.6113/JPE.2019.19.4.1054
Xiang Cui
Vol. 19, No. 4, pp. 1054-1067, Jul. 2019
10.6113/JPE.2019.19.4.1054
Fast Extraction of Symmetrical Components from Distorted Three-Phase Signals Based on Asynchronous-Rotational Reference Frame
Tianqu Hao Feng Gao Tao XuJunji Ke Zhibin Zhao Peng Sun
Huazhen Huang James Abuogo Xiang Cui
Vol. 19, No. 4, pp. 1045-1053, Jul. 2019
10.6113/JPE.2019.19.4.1045
Huazhen Huang James Abuogo Xiang Cui
Vol. 19, No. 4, pp. 1045-1053, Jul. 2019
10.6113/JPE.2019.19.4.1045